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SPICE MODELS: DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX114TU
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SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR Features
NEW PRODUCT
* * * * * * * * * * * * *
Epitaxial Planar Die Construction Built-In Biasing Resistors Lead Free/RoHS Compliant (Note 3) Surface Mount Package Suited for Automated Assembly
A
SOT-363 Dim A Min 0.10 1.15 2.00 0.30 1.80 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8
CXX YM
BC
B C D F
M
Mechanical Data
Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking: Date Code and Marking Code (See Page 4) Ordering Information (See Page 4) Weight: 0.006 grams (approximate) P/N DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX143EU DCX114TU R1 22K 47K 10K 2.2K 10K 4.7K 4.7K 10K R2 22K 47K 47K 47K 10K 4.7K MARKING C17 C20 C14 C06 C13 C07 C08 C12
CQ1 6 Q1 BQ2 5 EQ2 4
J D F L K G H
0.65 Nominal
H J K L M
All Dimensions in mm
CQ1 6 Q1
Q2 3 CQ2
BQ2 5
R1 R1
EQ2 4
R1 R2
R2 R 1
1 EQ1 2 BQ1
Q2 3 CQ2
Q1: NPN Transistor Q2: PNP Transistor
1 EQ1
2 BQ1
R1, R2
R1 Only
SCHEMATIC DIAGRAM
Maximum Ratings NPN Section
Characteristic Supply Voltage, (6) to (1) and (4) to (3) Input Voltage, (2) to (1) and (4) to (5)
@ TA = 25C unless otherwise specified Symbol VCC Value 50 -10 to +40 -10 to +40 -6 to +40 -5 to +12 -10 to +40 -5 Vmax -10 to +30 -5 Vmax 30 30 70 100 50 100 100 100 100 200 625 -55 to +150 Unit V
DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX143EU DCX114TU DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX143EU DCX114TU All (Note 2)
VIN
V
Output Current
IO
mA
Output Current Power Dissipation (Total) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage and Temperature Range
Note:
IC (Max) Pd RJA Tj, TSTG
mA mW C/W C
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. 150mW per element must not be exceeded. 3. No purposefully added lead.
DS30347 Rev. 8 - 2
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Maximum Ratings PNP Section
Characteristic
@ TA = 25C unless otherwise specified Symbol VCC Value 50 +10 to -40 +10 to -40 +6 to -40 +5 to -12 +10 to -40 +5 Vmax +10 to -30 +5 Vmax -30 -30 -70 -100 -50 -100 -100 -100 -100 200 625 -55 to +150 Unit V
NEW PRODUCT
Supply Voltage, (3) to (1) Input Voltage, (2) to (1) DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX143EU DCX114TU DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX143EU DCX114TU All (Page 1: Note 2)
VIN
V
Output Current
IO
mA
Output Current Power Dissipation (Total)
IC (Max) Pd RJA Tj, TSTG
mA mW C/W C
Thermal Resistance, Junction to Ambient Air (Page 1: Note 1) Operating and Storage and Temperature Range
Electrical Characteristics NPN Section
Characteristic (DCX143TU & DCX114TU only) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Input Resistor (R1) Tolerance Gain-Bandwidth Product Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT
@ TA = 25C unless otherwise specified Min 50 50 5 100 -30 Typ 250 250 Max -- 0.5 0.5 0.3 600 +30 Unit V V V A A V % MHz Test Condition IC = 50A IC = 1mA IE = 50A VCB = 50V VEB = 4V IC/IB = 2.5mA / 0.25mA IC/IB = 1mA / 0.1mA VCE = 10V, IE = -5mA, f = 100MHz DCX143TU DCX114TU
IC = 1mA, VCE = 5V
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Electrical Characteristics NPN Section (Continued)
@ TA = 25C unless otherwise specified Typ 1.1 1.1 1.1 1.16 1.9 1.9 1.9 1.99 Max Unit Test Condition
NEW PRODUCT
Characteristic DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU
Symbol
Min 0.5 0.5 0.3 0.5 0.5 0.5
Vl(off)
V
VCC = 5V, IO = 100A
Input Voltage
Vl(on)
3.0 3.0 1.4 1.1 3.0 3.0
VO = 0.3, IO = 5mA VO = 0.3, IO = 2mA VO = 0.3, IO = 1mA VO = 0.3, IO = 5mA VO = 0.3, IO = 10mA VO = 0.3, IO = 20mA IO/Il = 10mA / 0.5mA IO/Il = 10mA / 0.5mA IO/Il = 5mA / 0.25mA IO/Il = 5mA / 0.25mA IO/Il = 10mA / 0.5mA IO/Il = 10mA / 0.5mA
Output Voltage
VO(on)
0.1
0.3
V
Input Current
Il
0.36 0.18 0.88 3.6 0.88 0.88 0.5
mA
VI = 5V
Output Current
IO(off)
56 68 68 80 30 50 -30 -20
A
VCC = 50V, VI = 0V VO = 5V, IO = 5mA VO = 5V, IO = 5mA VO = 5V, IO = 10mA VO = 5V, IO = 10mA VO = 5V, IO = 5mA VO = 5V, IO = 10mA VCE = 10V, IE = 5mA, f = 100MHz
DC Current Gain
Gl
Input Resistor (R1) Tolerance Resistance Ratio Tolerance Gain-Bandwidth Product
R1 R2/R1 fT
250
+30 +20
% % MHz
Electrical Characteristics PNP Section
Characteristic (DCX143TU & DCX114TU only) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Input Resistor (R1) Tolerance Gain-Bandwidth Product Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT
@ TA = 25C unless otherwise specified Min -50 -50 -5 100 -30 Typ 250 250 Max -0.5 -0.5 -0.3 600 +30 Unit V V V A A V % MHz Test Condition IC = -50A IC = -1mA IE = -50A VCB = -50V VEB = -4V IC/IB = 2.5mA / 0.25mA IC/IB = 1mA / 0.1mA VCE = -10V, IE = 5mA, f = 100MHz DCX143TU DCX114TU
IC = -1mA, VCE = -5V
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Electrical Characteristics PNP Section (Continued)
@ TA = 25C unless otherwise specified Typ Max Unit Test Condition
NEW PRODUCT
Characteristic DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU
Symbol
Min -0.5 -0.5 -0.3 -0.5 -0.5 -0.5
Vl(off)
Input Voltage
-1.1 -1.1 -1.1 -1.16 -1.9 -1.9 -1.9 -2.5
V
VCC = -5V, IO = -100A
Vl(on)
-3.0 -3.0 -1.4 -1.1 -3.0 -3.0
VO = -0.3, IO = -5mA VO = -0.3, IO =- 2mA VO = -0.3, IO = -1mA VO = -0.3, IO = -5mA VO = -0.3, IO = -10mA VO = -0.3, IO = -20mA IO/Il = -10mA / -0.5mA IO/Il = -10mA / -0.5mA IO/Il = -5mA / -0.25mA IO/Il = -5mA / -0.25mA IO/Il = -10mA /- 0.5mA IO/Il = -10mA /- 0.5mA
Output Voltage
VO(on)
-0.1
-0.3
V
Input Current
Il
-0.36 -0.18 -0.88 -3.6 -0.88 -0.88 -0.5
mA
VI = -5V
Output Current
IO(off)
56 68 68 80 30 40 -30 -20
A
VCC = 50V, VI = 0V VO = -5V, IO = -5mA VO = -5V, IO = -5mA VO = -5V, IO = -10mA VO = -5V, IO = -10mA VO = -5V, IO = -5mA VO = -5V, IO = -10mA VCE = -10V, IE = -5mA, f = 100MHz
DC Current Gain
Gl
Input Resistor (R1) Tolerance Resistance Ratio Tolerance Gain-Bandwidth Product
R1 R2/R1 fT
250
+30 +20
% % MHz
Ordering Information
Device DCX124EU-7-F DCX144EU-7-F DCX114YU-7-F DCX123JU-7-F DCX114EU-7-F DCX143TU-7-F DCX143EU-7-F DCX114TU-7-F
Notes:
(Note 4) Packaging SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
CXX = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
CXX YM
Date Code Key Year Code Month Code Jan 1 2006 T Feb 2 2007 U Mar 3 Apr 4 2008 V May 5
2009 W Jun 6 Jul 7
2010 X Aug 8 Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
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TYPICAL CURVES - DCX123JU PNP SECTION
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
250
1
IC/IB = 10
NEW PRODUCT
PD, POWER DISSIPATION (mW)
200
0.1
TA = 75C TA = -25C TA = 25C
150
100
0.01
50
0 -50 0 50 100 150
0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 2 VCE(SAT) vs. IC
TA, AMBIENT TEMPERATURE (C) Fig. 1 Derating Curve
1000
VCE = 10V
12 10 COB, CAPACITANCE (pF)
IE = 0mA f = 1MHz
hFE, DC CURRENT GAIN
TA = 75C
8 6 4 2 0
TA = 25C TA = -25C
100
10 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain
TA = 75C
0
100
5
10
15
20
25
30
VR, REVERSE BIAS VOLTAGE (V) Fig. 4 Output Capacitance
10
100
VO = 5V
VO = 0.2V
IC, COLLECTOR CURRENT (mA)
10
TA = 25C
Vin, INPUT VOLTAGE (V)
1
TA = -25C
TA = -25C
1
TA = 75C
0.1
0.01
TA = 25C
0.001 0 1 2 3 4 5 6 7 8 9 10
0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 6 Input Voltage vs. Collector Current
Vin, INPUT VOLTAGE (V) Fig. 5 Collector Current Vs. Input Voltage
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TYPICAL CURVES - DCX123JU NPN SECTION
1
1000
IC/IB = 10
NEW PRODUCT
VCE = 10V
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
TA = 75C
0.1
TA = 75C TA = -25C TA = 25C
hFE, DC CURRENT GAIN
TA = 25C
100
TA = -25C
0.01
0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 7 VCE(SAT) vs. IC
10 1 10 IC, COLLECTOR CURRENT (mA) Fig. 8 DC Current Gain
TA = 75C
100
100
4
IC, COLLECTOR CURRENT (mA)
IE = 0mA f = 1MHz
VO = 5V
COB, CAPACITANCE (pF)
10
TA = 25C
3
1
TA = -25C
2
0.1
1
0.01
0 0 5 10 15 20 25 30
0.001 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (V) Fig. 10 Collector Current Vs. Input Voltage
VR, REVERSE BIAS VOLTAGE (V) Fig. 9 Output Capacitance
10
VO = 0.2V
Vin, INPUT VOLTAGE (V)
TA = -25C
1
TA = 75C
TA = 25C
0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 11 Input Voltage vs. Collector Current
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TYPICAL CURVES - DCX143EU PNP SECTION
250
0.12 0.11
Ib = 3.5mA Ib = 3mA Ib = 4mA Ib = 4.5mA
NEW PRODUCT
PD, POWER DISSIPATION (mW)
IC, COLLECTOR CURRENT (A)
200
0.1 0.09 0.08 0.07 0.06
150
100
Ib = 1mA
0.05 0.04 0.03 0.02 0.01
Ib = 2mA Ib = 2.5mA Ib = 1.5mA Ib = 0.5mA
50
0 0 25 50 75 100 100 150 175
0 0 0.5 1.5 1 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 13 VCE vs IC 2
TA, AMBIENT TEMPERATURE (C) Fig. 12 Power Derating Curve
180
VCE = -5V TA = 150C
1
IC/IB = 10
12 11 VBE, BASE-EMITTER VOLTAGE (V) 10 9 8 7 6 5 4 3 2 1
TA = -55C TA = 25C TA = 85C VCE = -5V
TA = 125C
hFE, DC CURRENT GAIN
140 120 100 80 60
TA = 25C TA = 85C
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
160
TA = 85C
TA = 125C
TA = 150C
0.1
TA = 25C TA = -55C
40
TA = -55C
20 0 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 14 DC Current Gain
0.01 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 15 VCE(SAT) vs IC
0 0.1 1
TA = 125C
TA = 150C
10
100
IC, COLLECTOR CURRENT (mA) Fig. 16 VBE vs IC
30
IC/IB = 10
15
VCE = -0.3V
27 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
VI(ON), INPUT VOLTAGE (V)
24 21 18 15 12 9 6 3
TA = -55C TA = 85C TA = 25C TA = 125C TA = 150C
12
9
6
3
TA = -55C
TA = 25C
TA = 85C TA = 150C
0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 17 VBE(SAT) vs IC
0 0.1 1
TA = 125C
10
100
IC, OUTPUT CURRENT (mA) Fig. 18 VI(ON) vs IC
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TYPICAL CURVES - DCX143EU NPN SECTION
250
0.15 0.14 IC, COLLECTOR CURRENT (A) 0.13 0.12 0.11 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01
Ib = 1.5mA Ib = 1mA Ib = 2.5mA Ib = 3mA Ib = 3.5mA Ib = 4mA
NEW PRODUCT
PD, POWER DISSIPATION (mW)
200
150
100
Ib = 0.5mA Ib = 2mA
50
0 0 25 50 75 100 100 150 175
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 20 VCE vs IC 2
TA, AMBIENT TEMPERATURE (C) Fig. 19 Power Derating Curve
250
VCE = -5V
1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
10 VBE, BASE-EMITTER VOLTAGE (V)
IC/IB = 10
9 8 7 6 5 4 3 2 1
VCE = 5V
200 hFE, DC CURRENT GAIN
TA = 150C
TA = 85C
TA = 125C
TA = 150C
150
TA = 125C
0.1
TA = 85C
TA = -55C
TA = 25C
100
0.01
50
TA = 25C TA = -55C
TA = -55C
TA = 25C
TA = 85C
TA = 150C TA = 125C
0 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 21 DC Current Gain
0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 22 VCE(SAT) vs IC
0 0.1 1
10
100
IC, COLLECTOR CURRENT (mA) Fig. 23 VBE vs IC
30 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 27 24 21 18 15 12 9 6 3 0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 24 VBE(SAT) vs IC
TA = 25C TA = -55C TA = 85C TA = 125C TA = 150C IC/IB = 10
25 22.5 20 VI(ON), INPUT VOLTAGE (V) 17.5 15 12.5 10 7.5 5 2.5 0 0.1 1 10
TA = -55C TA = 25C TA = 85C TA = 150C TA = 125C VCE = 0.3V
100
IC, OUTPUT CURRENT (mA) Fig. 25 VI(ON) vs IC
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TYPICAL CURVES - DCX114TU PNP SECTION
1
1000
IC/IB = 10
NEW PRODUCT
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
TA = 75C
VCE = 10V
hFE, DC CURRENT GAIN
TA = -25C TA = 25C
0.1
TA = 75C TA = -25C TA = 25C
100
0.01
10
0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 26 VCE(SAT) vs. IC
1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 27 DC Current Gain
TA = 75C
100
4
IC, COLLECTOR CURRENT (mA)
IE = 0mA f = 1MHz
100
TA = 25C
COB, CAPACITANCE (pF)
10
TA = -25C
3
1
2
0.1
1
0.01
0 0 5 10 15 20 25 30
0.001 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (V) Fig. 29 Collector Current Vs. Input Voltage
VR, REVERSE BIAS VOLTAGE (V) Fig. 28 Output Capacitance
10
VO = 0.2V
Vin, INPUT VOLTAGE (V)
TA = -25C TA = 75C TA = 25C
1
1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 30 Input Voltage vs. Collector Current
DS30347 Rev. 8 - 2
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TYPICAL CURVES - DCX114TU NPN SECTION
1
IC/IB = 10
1000
TA = 75C VCE = 10V
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
NEW PRODUCT
hFE, DC CURRENT GAIN
TA = -25C TA = 25C
0.1
TA = 75C TA = -25C TA = 25C
100
0.01
10
0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 31 VCE(SAT) vs. IC
1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 32 DC Current Gain
TA = 75C
100
100
4
IC, COLLECTOR CURRENT (mA)
IE = 0mA f = 1MHz
TA = 25C
10
TA =-25C
COB, CAPACITANCE (pF)
3
1
2
0.1
1
0.01
0 0 5 10 15 20 25 30
0.001 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (V) Fig. 34 Collector Current Vs. Input Voltage
VR, REVERSE BIAS VOLTAGE (V) Fig. 33 Output Capacitance
10
VO = 0.2V
Vin, INPUT VOLTAGE (V)
TA = -25C TA = 75C TA = 25C
1
1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 35 Input Voltage vs. Collector Current
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IMPORTANT NOTICE
NEW PRODUCT
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
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